Silicon carbide is a third-generation semiconductor material and an ideal material for producing high temperature, high pressure, high frequency, and high-power devices. The bandgap width of silicon carbide is about 3 times that of silicon, and the critical breakdown field strength is about 10 times that of silicon.
Its advantage lies in its theoretical working temperature of over 400 degrees, ability to withstand higher voltages, ability to handle higher voltages in a smaller size, and support higher MOSFET blocking voltages. The thermal conductivity of silicon carbide is 1490 W/mK, while that of silicon is 150 W/mK, making it have better thermal conductivity and stability than silicon.